The Performance of Charge-coupled Devices in Signal Processing at Low Signal Levels*

Experimental data are presented characterizing the noise sources in surface-channel CCDs fabricated by conventional single-level processing in P-type silicon. These data were obtained through noise spectrum measurements on the output of a continuously running CCD shift register. Quantitative comparisons are made with noise levels predicted by the results of spectral analyses also included in this paper. A model is then developed for characterizing CCD noise in analog signal-processing applications. Finally, using a simple input model, the dominant noise sources are referred to the input to provide the circuit designer with a single equivalent input noise voltage.